IRWIN AND JOAN JACOBS CENTER FOR COMMUNICATION AND INFORMATION TECHNOLOGIES TEAM: ThrEshold Adaptive Memristor Model

نویسندگان

  • S. Kvatinsky
  • E. G. Friedman
  • A. Kolodny
  • U. C. Weiser
چکیده

Memristive devices are novel devices, which can be used in applications such as memory, logic, and neuromorphic systems. A memristive device offers several advantages to existing applications: nonvolatility, good scalability, effectively no leakage current, and compatibility with CMOS technology, both electrically and in terms of manufacturing. Several models for memristive devices have been developed and are discussed in this paper. Digital applications such as memory and logic require a model that is highly nonlinear, simple for calculations, and sufficiently accurate. In this paper, a new memristive device model is presented – TEAM, ThrEshold Adaptive Memristor model. This model is flexible and can be fit to any practical memristive device. Previously published models are compared in this paper to the proposed TEAM model. It is shown that the proposed model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

IRWIN AND JOAN JACOBS CENTER FOR COMMUNICATION AND INFORMATION TECHNOLOGIES VTEAM – A General Model for Voltage Controlled Memristors

Memristors are novel electrical devices used for a variety of applications including memory, logic circuits, and neuromorphic systems. Memristive technologies are attractive due to the nonvolatility, scalability, and compatibility with CMOS. Numerous physical experiments have shown the existence of a threshold voltage in some physical memristors. Additionally, as shown in this paper, some appli...

متن کامل

IRWIN AND JOAN JACOBS CENTER FOR COMMUNICATION AND INFORMATION TECHNOLOGIES Memristor-based IMPLY Logic Design Procedure

Memristors can be used as logic gates. No design methodology exists, however, for memristor-based combinatorial logic. In this paper, the design and behavior of a memristivebased logic gate – an IMPLY gate are presented and design issues such as the tradeoff between speed (fast write times) and correct logic behavior are described, as part of an overall design methodology. A memristor model is ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012